IGN1214M700 and IGN1214M700S are high power GaN-on-SiC RF
power transistors that have been designed to suit the unique needs
of L band radar systems. They operate over the full 1.2 - 1.4 GHz
frequency range. Under 300ms, 10% duty cycle pulse conditions,
they supply a minimum of 700 W of peak output power, with typically
>16.5 dB of gain and 60% efficiency. They operate from a 50 V
supply voltage. For optimal thermal efficiency, the transistors are
housed in a metal-based package with an epoxy-sealed ceramic lid.