IGN1214M700
L-Band, GaN/SiC, RF Power Transistor
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
1.2 | 1.4 | 700 | 18 | 65 | 300µs, 10% | 50 | Input | PL64B1 |
IGN1214M700 and IGN1214M700S are high power GaN-on-SiC RF
power transistors that have been designed to suit the unique needs
of L band radar systems. They operate over the full 1.2 - 1.4 GHz
frequency range. Under 300ms, 10% duty cycle pulse conditions,
they supply a minimum of 700 W of peak output power, with typically
>16.5 dB of gain and 60% efficiency. They operate from a 50 V
supply voltage. For optimal thermal efficiency, the transistors are
housed in a metal-based package with an epoxy-sealed ceramic lid.
