IGN1214M700

L-Band, GaN/SiC, RF Power Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.2
1.4
700
18
65
300µs, 10%
50
Input
PL64B1
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IGN1214M700 and IGN1214M700S are high power GaN-on-SiC RF
power transistors that have been designed to suit the unique needs
of L band radar systems. They operate over the full 1.2 - 1.4 GHz
frequency range. Under 300ms, 10% duty cycle pulse conditions,
they supply a minimum of 700 W of peak output power, with typically
>16.5 dB of gain and 60% efficiency. They operate from a 50 V
supply voltage. For optimal thermal efficiency, the transistors are
housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

700W Output Power

Pre-matched Input and Output Impedances

High Efficiency - 63% typical

100% High Power RF Tested

RoHS and REACH Compliant

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99