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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.03
0.512
500
19
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
66
1ms, 10%
50
None
IGN131
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN131 | 0.03 | 0.512 | 500 | 19 | 66 | 1ms, 10% | 50 | None | PL22D1 |
IGN131 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of VHF/UHF systems. It operates over the full 30 - 512 MHz frequency range. Under 1ms, 10% duty cycle pulse conditions, it supplies typically > 500 W of peak output power. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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