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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.03
0.512
500
19
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
66
1ms, 10%
50
None

IGN131

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN131
0.03
0.512
500
19
66
1ms, 10%
50
None
PL22D1

IGN131 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of VHF/UHF systems. It operates over the full 30 - 512 MHz frequency range. Under 1ms, 10% duty cycle pulse conditions, it supplies typically > 500 W of peak output power. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >500W

High Efficiency - up to 70%

100% RF Tested Under 1ms, 10% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

VHF/UHF Applications

EXPORT STATUS

EAR99

Contact us

Integra Technologies Inc.
321 Coral Circle
El Segundo, CA 90245-4620.
310-606-0855

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