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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.3
1.45
650
18
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
60
300µs, 10%
60
Input

IGN1315M650

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN1315M650
1.3
1.45
650
18
60
300µs, 10%
60
Input
PL84A1

IGN1315M650 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies a minimum of 650W of peak output power, with typically >18 dB of gain and 60% efficiency. It operates from a 60 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power > 650W

Pre-matched Input and Output Impedances

High Efficiency - up to 60%

100% RF Tested Under 300ms, 10% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

L-Band Radar Systems

EXPORT STATUS

EAR99

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