IGN1315M650

GaN Transistor for L-Band Radar Operating at 1.3-1.5 GHz

Min Freq (GHz)	Max Freq (GHz)	Min Output Power (W)	Typ Gain (dB)	Typ Efficiency (%)	Pulse Width & Duty Factor	Voltage (V)	Matching	Package
1.3	1.45	650	18	60	300µs, 10%	60	Input	PL84A1

IGN1315M650 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies a minimum of 650W of peak output power, with typically >18 dB of gain and 60% efficiency. It operates from a 60 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power > 650W

Pre-matched Input and Output Impedances

High Efficiency - up to 60%

100% RF Tested Under 300ms, 10% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

L-Band Radar Systems

EXPORT STATUS

EAR99