IGN2429M400 is a high power GaN transistor best suited for S-band radar applications. Specified for use under Class AB operation, this transistor offers 2.4 - 2.9 GHz of operating frequency, minimum of 400W of peak pulse power, 48V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.