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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.4
2.9
400
13
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
300µs, 10%
48
Input & Output

IGN2429M400

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN2429M400
2.4
2.9
400
13
50
300µs, 10%
48
Input & Output
PL84A1

IGN2429M400 is a high power GaN transistor best suited for S-band radar applications. Specified for use under Class AB operation, this transistor offers 2.4 - 2.9 GHz of operating frequency, minimum of 400W of peak pulse power, 48V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

400W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99

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