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IGN2729M200

S-Band, GaN/SiC, RF Power Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
2.7
2.9
200
18
65
100µs, 10%
50
Input
PL32A1
ign0160um12.jpeg

IGN2729M200 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies 200W of peak output power, with typically >18 dB of gain and 65% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

200W Output Power

Pre-matched Input Impedance

High Efficiency - 65% typical

100% RF Tested Under 100µs, 10% duty cycle pulse condition

Full Non-Linear Electrothermal Model Available

APPLICATION

S-Band Radar Systems

EXPORT STATUS

EAR99

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