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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
2.9
200
18
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
65
100µs, 10%
50
Input
IGN2729M200
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2729M200 | 2.7 | 2.9 | 200 | 18 | 65 | 100µs, 10% | 50 | Input | PL32A1 |
IGN2729M200 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies 200W of peak output power, with typically >18 dB of gain and 65% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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