IGN2729M250C is a high power S-band transistor, best suited for S-band radar applications. Specificed for use under Class AB operation, this transistor offers 2.7 - 2.9 GHz of operating frequency, minimum of 250W of peak output power, and 10% duty cycle. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.