IGN2729M250C

S-Band Radar Transistor Offers 250W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
2.7
2.9
250
11
60
300µs, 10%
50
Input & Output
PL64A1
ign0160um12.jpeg

IGN2729M250C is a high power S-band transistor, best suited for S-band radar applications. Specificed for use under Class AB operation, this transistor offers 2.7 - 2.9 GHz of operating frequency, minimum of 250W of peak output power, and 10% duty cycle. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

250W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99