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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
2.9
250
11
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
60
300µs, 10%
50
Input & Output
IGN2729M250C
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2729M250C | 2.7 | 2.9 | 250 | 11 | 60 | 300µs, 10% | 50 | Input & Output | PL64A1 |
IGN2729M250C is a high power S-band transistor, best suited for S-band radar applications. Specificed for use under Class AB operation, this transistor offers 2.7 - 2.9 GHz of operating frequency, minimum of 250W of peak output power, and 10% duty cycle. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
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