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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
2.9
250
11
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
60
300µs, 10%
50
Input & Output

IGN2729M250C

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN2729M250C
2.7
2.9
250
11
60
300µs, 10%
50
Input & Output
PL64A1

IGN2729M250C and IGN2729M250CS are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply a minimum of 250W of peak output power, with typically >11 dB of gain and 60% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >250W

Pre-matched Input and Output Impedances

High Efficiency - 60% typical

100% RF Tested Under 300µs, 10% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

S-band Radar Systems

EXPORT STATUS

EAR99

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