IGN2729M400

S-Band Radar Transistor Operating at 2.7-2.9 GHz

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
2.7
2.9
440
11
58
300µs, 10%
50
Input & Output
PL64A1
ign0160um12.jpeg

IGN2729M400 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies a minimum of 400W of peak output power, with typically >11 dB of gain and 58% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >400W

Class AB Operation

Pre-matched Input and Output Impedances

High Efficiency - 58% typical

100% RF Tested Under 300µs, 10% duty cycle pulse conditions

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99