IGN2729M400R3
S-Band, GaN/SiC, RF Power Transistor
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
2.7 | 2.9 | 400 | 17.5 | 63 | 300µs, 10% | 50 | Input & Output | PL44C1 |
IGN2729M400R3 and IGN2729M400R3S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply 400W of peak output power, with typically >17.5 dB of gain and 63% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy sealed ceramic lid.
FEATURES
GaN on SiC HEMT Technology
400W Output Power
Pre-matched Input and Output Impedances
High Efficiency - 63% typical
100% RF Tested Under 100µs, 10% duty cycle pulse conditions
IGN2729M400R3 - bolt-down flange, IGN2729M400R3S - earless flange
APPLICATION
S-Band Radar Systems
EXPORT STATUS
EAR99
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