IGN2729M400R3

S-Band, GaN/SiC, RF Power Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
2.7
2.9
400
17.5
63
300µs, 10%
50
Input & Output
PL44C1
ign0160um12.jpeg

IGN2729M400R3 and IGN2729M400R3S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply 400W of peak output power, with typically >17.5 dB of gain and 63% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

400W Output Power

Pre-matched Input and Output Impedances

High Efficiency - 63% typical

100% RF Tested Under 100µs, 10% duty cycle pulse conditions

IGN2729M400R3 - bolt-down flange, IGN2729M400R3S - earless flange

APPLICATION

S-Band Radar Systems

EXPORT STATUS

EAR99

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