top of page
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
3
65
14.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
60
300µs, 20%
32
Input & Output
IGN2730M65
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2730M65 | 2.7 | 3 | 65 | 14.5 | 60 | 300µs, 20% | 32 | Input & Output | PL32A1 |
IGN2730M65 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 2.7-3.0 GHz of operating frequency, a minimum of 65W of peak output power, 32V and 20% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
bottom of page