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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
3.1
10
15
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
40
40µs, 50%
32
Input
IGN2731L10
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2731L10 | 2.7 | 3.1 | 10 | 15 | 40 | 40µs, 50% | 32 | Input | PL32A2 |
IGN2731L10 is a high power GaN-on-SiC RF power transistor that has been designed for use in S-band radar systems in the 2.7 - 3.1 GHz frequency range. It supplies a minimum of 10 W of output power, with typically >15dB of gain and 40% efficiency. It operates from a 32 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES
GaN on SiC HEMT Technology
Output Power >10 W
Pre-matched Input Impedance
High Efficiency - 40% Typically
100% RF Tested Under 40µs Pulse Length, 50% Duty Cycle Conditions
RoHS and REACH Compliant
IGN2731L10 has a bolt-down flange, IGN2731L10S is the earless flange option
APPLICATION
S-band Radar Systems
EXPORT STATUS
EAR99
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