top of page
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
3.1
10
15
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
40
40µs, 50%
32
Input

IGN2731L10

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN2731L10
2.7
3.1
10
15
40
40µs, 50%
32
Input
PL32A2

IGN2731L10 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 2.7-3.1 GHz of operating frequency, a minimum of 10W of peak output power, 32V, and 50% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

10W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99

bottom of page