IGN2731M120
S-Band Radar Transistor Offering 120W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
2.7 | 3.1 | 120 | 13.5 | 65 | 100µs, 20% | 30 | Input & Output | PL44C1 |
IGN2731M120 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 2.7-3.1 GHz of operating frequency, a minimum of 120W of peak output power, 30V, and 20% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
