IGN2731M5
S-Band Radar Transistor Operating at 2.7-3.1 GHz
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
2.7 | 3.1 | 5 | 16 | 50 | 300µs, 10% | 40 | Input | PL32A1 |
IGN2731M5 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 2.7-3.1 GHz of operating frequency, a minimum of 5W of peak output power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
GaN on SiC HEMT Technology
5W Output Power
Class AB Operation
Pre-matched Internal Impedance
100% High Power RF Tested
Negative Gate Voltage/Bias Sequencing
APPLICATION
S-Band Radar
EXPORT STATUS
EAR99
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