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IGN2998S500

High Power GaN Transistor Operating at 2.998 GHz

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
2.998
2.998
500
12
55
8µs, 1%
50
Input & Output
PL64A1
ign0160um12.jpeg

IGN2998S500 is a high power GaN transistor, specified for use under Class AB operation. This transistor offers 2.998 GHz of operating frequency, minimum of 500W of peak pulse power, 50V and 1% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

500W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

S-Band

EXPORT STATUS

3A001

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