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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
3.1
3.5
135
14
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
300µs, 10%
50
Input & Output
IGN3135M135
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN3135M135 | 3.1 | 3.5 | 135 | 14 | 55 | 300µs, 10% | 50 | Input & Output | PL32A1 |
IGN3135M135 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 3.1-3.5 GHz of operating frequency, a minimum of 135W of peak output power, 50V, and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
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