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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
3.3
3.8
150
10
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
47
CW
28
Input & Output
IGN3338CW150
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN3338CW150 | 3.3 | 3.8 | 150 | 10 | 47 | CW | 28 | Input & Output | PL64B1 |
IGN3338CW150 and IGN3338CW150S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of S Band systems. They operate over the full 3.3 - 3.8 GHz frequency range. Under CW conditions, they typically supply a minimum of 150 W of output power, with typically > 10dB of associated gain and 47% efficiency. They operate from a 28 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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