Integra Technologies offers a pair of 135 W and a 130 W gallium nitride on silicon carbide (GaN/SiC) transistors for S-band radar applications.

IGT2731M130 operates at the instantaneous operating frequency range of 2.7 to 3.1 GHz and IGT3135M135 operates at the instantaneous operating frequency range of 3.1 to 3.5 GHz. Both products are 50-Ohm matched high-power GaN HEMT transistors and depletion-mode devices that require negative gate bias voltage and bias sequencing.

IGT3135M135 operates at the instantaneous operating frequency range of 3.1 to 3.5 GHz, supplying up to 135 W of peak pulsed power. This transistor is also a 50-Ohm matched high-power GaN HEMT transistor and is also a depletion-mode device that requires a negative gate bias voltage and bias sequencing.

Both products come in Integra's package PL44A1, size is at 0.800 in. (20.32 mm) wide and 0.400 in. (10.16 mm) long. Earless, they are 0.400 in. (10.16 mm) wide and 0.400 in. (10.16 mm) long. Assembled via chip and wire technology, utilizing gold metallization, both units are housed in a metal-based package and sealed with a ceramic-epoxy lid.

Learn more about IGT3135M135 and IGT2731M130 or get a quote.