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New Line of GaN/SiC RF Power Modules Help Simplify Radar Amplifier Design

2017 թ. դեկտեմբերի 1, ուրբաթ

We are pleased to announce the formal launch of our new line of over a dozen standardized RF Power Modules (aka Pallets).

Differentiating these integrated standard modules from custom or build-to-print, PCB amplifier assemblies, or "pallets", these new, ultra-efficient RF Power Modules are being developed to offer a new level of integration which results in powerful yet simple, higher-level building blocks for creating SWaP-C optimized high power amplifiers (HPAs) found in pulsed and CW radar systems.

Built-in functions can include RF matching, gate-pulsing and sequencing (GPS), output noise suppression, temperature compensation, and VSWR protection. Integra's RF power modules are available in a variety of RF bands, and future standard and semi-custom solutions will be built around Integra's commitment to push their advanced gallium nitride on silicon carbide (GaN-on-SiC) 50-ohm RF Power Transistor technology up to X-band territories. Standard RF Power Modules currently offer output power up to 2400 W, and efficiencies up to 70%. Unique footprints and packaging approaches are available.

Learn more about these advanced, integrated RF Power Module solutions for high power amplifier design, and request pricing.

Contact us

Integra Technologies Inc.
321 Coral Circle
El Segundo, CA 90245-4620.
310-606-0855

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