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New Tech Brief Describes How to Choose the Right RF Power Transistors

Integra has released their new tech brief "Zero-in on the Best RF Transistor Technology for Your Radar's High Power Amplifier Designs." The best solid-state, high power amplifiers (HPAs), especially those used in critical defense, aerospace, [...]

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RF and Microwave Power Transistors and Power Amplifier Modules Selection Guide

Integra's new 2019 RF and Microwave Power Transistors and Power Amplifier Modules product selection guide provides a clean, captivating design, detailing their extensive line of RF power devices for use in radar system high power amplifier (HPA) designs.

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White Paper Discusses Using kW-Level GaN Transistors for Radar and Avionic Systems

We proudly present a white paper written by Integra's Daniel Koyama, Apet Barsegyan, and John Walker, describing the implications of using kW-level GaN transistors in radar and avionic systems. This paper examines the effect of using normal [...]

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White Paper Presents Rationale for High Voltage GaN HEMT Technology in Wideband Radar Applications

We are excited to offer a white paper describing the rationale for utilizing high voltage GaN HEMT technology in wideband radar and avionic systems. The signal discussed is a pulse of 100 ?s width and 10% duty cycle. This paper explores the [...]

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GaN-on-SiC Transistor Evaluation Kits Help Verify Performance in RF Systems

We are happy to offer Gallium Nitride on Silicon Carbide (GaN-on-SiC) HEMT transistor evaluation kits to designers evaluating this technology for their high power amplifier designs. Each kit is customized to include a designer's transistor [...]

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App. Note Demonstrates How to Utilize Fail-Safe Biasing in GaN Transistors

We have published an application note on to how to best utilize the fully automatic and fail-safe bias circuit feature in our line of high power GaN transistors that only requires a single positive voltage power supply. As GaN HEMT transistors are [...]

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Integra Technologies Wins Air Force Contract to Accelerate Thermally Enhanced GaN/SiC Readiness

Integra Technologies announced today it has been awarded a two-year contract by the U.S. Air Force to accelerate technology and manufacturing readiness of its patented, Thermally-Enhanced GaN/SiC technology. Integra's GaN/SiC technology is ideal for high efficiency, solid-state RF power applications including high power radar systems requiring improved performance, increased range and reduced operating costs.

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