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IGNP0450M850

P-Band, GaN/SiC, RF Power Module

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Size
0.4
0.45
850
20
75
300µs, 10%
50
3.0 x 1.72 inch
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IGNP0450M850 is a high power GaN-on-SiC RF power module that has been designed to suit the unique needs of P band radar systems. It operates over the full 400-450 MHz frequency range. Under 300ms, 10% duty cycle pulse conditions, it supplies a minimum of 850 W of peak output power, with typically >20 dB of gain and 75% efficiency. It operates from a 50 V supply voltage.

FEATURES

GaN on SiC HEMT Technology

Output Power > 850W

Pre-matched Input Impedance

Exceptionally High Efficiency - up to 78%

100% RF Tested Under 300µs, 10% duty cycle pulse conditions

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APPLICATION

P-band Radar Systems

EXPORT STATUS

TBD

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