IGNP0450M850
P-Band, GaN/SiC, RF Power Module
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Size |
|---|---|---|---|---|---|---|---|
0.4 | 0.45 | 850 | 20 | 75 | 300µs, 10% | 50 | 3.0 x 1.72 inch |
IGNP0450M850 is a high power GaN-on-SiC RF power module that has been designed to suit the unique needs of P band radar systems. It operates over the full 400-450 MHz frequency range. Under 300ms, 10% duty cycle pulse conditions, it supplies a minimum of 850 W of peak output power, with typically >20 dB of gain and 75% efficiency. It operates from a 50 V supply voltage.
