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IGNP3135M500

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Size
IGNP3135M500
3.1
3.5
500
13
50
300µs, 10%
50
3.2 x 2.9 x 0.27 inch
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
3.1
3.5
500
13
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Size
50
300µs, 10%
50
3.2 x 2.9 x 0.27 inch

IGNP3135M500 is a 50-Ohm GaN based high power pulsed module (aka pallet) for S-band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. This module supplies a minimum of 500W of peak pulse power under the conditions of 300µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters.

FEATURES

GaN on SiC HEMT Technology

500W Output Power

Fully-matched to 50 Ohms

High Efficiency

Class AB, Bias Sequencing required

100% RF Tested Under 300µs, 10% duty cycle pulse conditions

APPLICATION

S-band Radar

EXPORT STATUS

TBD

Contact us

Integra Technologies Inc.
321 Coral Circle
El Segundo, CA 90245-4620.
310-606-0855

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