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IB0607S10 is a high power pulsed avionics transistor designed for Sub-1 GHz avionics systems operating at 0.653 - 0.687 GHz. While operating in Class C mode under 20us pulse conditions at VCC= 50V, this common base device supplies a minimum of 12W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. All devices are 100% screened for large signal RF parameters.
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