IB0607S100

Sub-1 GHz Transistor Operating at 120W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.653
0.687
100
13
62
20µs, 2%
50
Input
P32A5
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IB0607S100 is a high power pulsed avionics transistor designed for Sub-1 GHz avionics systems operating at 0.653 to 0.687 GHz. While operating in Class C mode under 20us pulse conditions at VCC= 50V, this common base device supplies a minimum of 120W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

120W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

Sub-1 GHz Technology

EXPORT STATUS

EAR99