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IB0607S1000
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IB0607S1000 | 0.653 | 0.687 | 1000 | 9 | 55 | 20µs, 2% | 50 | Input | P64A6 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.653
0.687
1000
9
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
20µs, 2%
50
Input
IB0607S1000 is a high power pulsed transistor designed for Sub-1 GHz avionics systems operating at 0.653 to 0.687 GHz. While operating in Class C mode under 20us pulse conditions at VCC=50V, this common base device supplies a minimum of 1000W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
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