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IB0607S1000

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IB0607S1000
0.653
0.687
1000
9
55
20µs, 2%
50
Input
P64A6
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.653
0.687
1000
9
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
20µs, 2%
50
Input

IB0607S1000 is a high power pulsed transistor designed for Sub-1 GHz avionics systems operating at 0.653 to 0.687 GHz. While operating in Class C mode under 20us pulse conditions at VCC=50V, this common base device supplies a minimum of 1000W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

1000W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

Sub-1 GHz Technology

EXPORT STATUS

EAR99

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