IB0810M100
Bipolar L-Band Transistor Operating at 100W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
0.87 | 0.99 | 100 | 10 | 69 | 300µs, 15% | 36 | Input | P44C3 |
IB0810M100 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 0.870 - 0.990 GHz. While operating in Class C mode at VCC=36V, this common base device supplies a minimum of 100W of peak pulse power under the conditions of 300us pulse width and 15% duty cycle. All devices are 100% screened for large signal RF parameters in a broadband RF test fixture with no external tuning.
