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IB0810M12
Bipolar L-Band Transistor Operating at 12W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
0.87 | 0.99 | 12 | 8 | 53 | 300µs, 15% | 36 | None | P44C3 |
IB0810M12 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 0.870 - 0.990 GHz. While operating in Class C mode this common base device supplies a minimum of 12W of peak pulse power under the conditions of 300µs pulse width and 15% duty cycle. All devices are 100% screened for large signal RF parameters in a broadband RF test fixture with no external tuning.
FEATURES
Silicon Bipolar
Matched to 50-ohms
12W Output Power
100% High Power RF Tested
Class C Operation
APPLICATION
L-Band Radar
EXPORT STATUS
EAR99
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