IB0810M12

Bipolar L-Band Transistor Operating at 12W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.87
0.99
12
8
53
300µs, 15%
36
None
P44C3
ign0160um12.jpeg

IB0810M12 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 0.870 - 0.990 GHz. While operating in Class C mode this common base device supplies a minimum of 12W of peak pulse power under the conditions of 300µs pulse width and 15% duty cycle. All devices are 100% screened for large signal RF parameters in a broadband RF test fixture with no external tuning.

FEATURES

Silicon Bipolar

Matched to 50-ohms

12W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99