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IB0810M12 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 0.870 - 0.990 GHz. While operating in Class C mode this common base device supplies a minimum of 12W of peak pulse power under the conditions of 300µs pulse width and 15% duty cycle. All devices are 100% screened for large signal RF parameters in a broadband RF test fixture with no external tuning.
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