IB0810M210

Bipolar L-Band Transistor Operating at 210W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.87
0.99
210
8
59
300µs, 15%
36
Input
P44C3
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IB0810M210 is designed for L-Band radar systems operating over the instantaneous band width of 0.870 - 0.990 GHz. While operating in Class C mode this common base device supplies a minimum of 210W of peak pulse power under the conditions of 300us pulse width and 15% duty cycle. All devices are 100% screened for large signal RF parameters in a broadband RF test fixture with no external tuning.

FEATURES

Silicon Bipolar

Matched to 50-ohms

210W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99