IB0912L200

High Power Bipolar Transistor Operating at 200W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.96
1.215
200
10
58
444x (7µs On, 6µs Off), 22.7%
44
Input & Output
P54A5
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IB0912L200 is a high power pulsed transistor device designed for systems operating over the instantaneous bandwidth of 0.960 - 1.215 GHz. While operating in Class C mode under the specified pulsing conditions and VCC=44V, this common base device supplies a minimum of 200W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

200W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99