IB0912L30
Bipolar Transistor Operating at 30W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
0.96 | 1.215 | 30 | 11 | 61 | 450µs, 15% | 36 | Input | P22A1 |
IB0912L30 is a high power pulsed transistor device designed for systems operating over the instantaneous bandwidth of 0.960 - 1.215 GHz. While operating in Class C mode under 450us-15% pulsing conditions and VCC=36V, this common base device supplies a minimum of 30W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
