IB0912L70
High Power Bipolar Transistor Operating at 70W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
0.96 | 1.215 | 70 | 12 | 58 | 444x (7µs On, 6µs Off), 22.7% | 44 | Input & Output | P22A1 |
IB0912L70 is the high power pulsed transistor device designed for systems operating over the instantaneous bandwidth of 0.960 - 1.215 GHz. While operating in Class C mode under 444x (7us on, 6us off), 22.7% pulsing conditions and VCC=44V, this common base device supplies a minimum of 70W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
