IB0912M210

High Power L-Band Transistor Operating at 210W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.96
1.215
210
12
53
10µs, 10%
50
Input & Output
P44C7
ign0160um12.jpeg

IB0912M210 is a high power pulsed transistor device designed for systems operating over the instantaneous bandwidth of 0.960 - 1.215 GHz. While operating in Class C mode under pulsing conditions of 10us/10% and VCC=50V, this common base device supplies a minimum of 210W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

210W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99