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IB0912M70

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IB0912M70
0.96
1.215
70
11
64
10µs, 10%
50
Input & Output
P32C1
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.96
1.215
70
11
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
64
10µs, 10%
50
Input & Output

IB0912M70 is a high power pulsed transistor device designed for systems operating over the instantaneous bandwidth of 0.960 - 1.215 GHz. While operating in Class C mode under TACAN pulsing conditions and VCC=50V, this common base device supplies a minimum of 70W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

70W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99

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