IB1011L110
L-Band Avionics Transistor Operating at 110W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
1.03 | 1.03 | 110 | 11 | 65 | 48x (32µs On, 18µs Off), 6.4% | 48 | Input | P32A5 |
IB1011L110 is a high power pulsed avionics transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under Mode S - ELM pulse burst conditions at VCC = 48V, this common base device supplies a minimum of 110W of peak pulse power. This bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
