IB1011L110

L-Band Avionics Transistor Operating at 110W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.03
110
11
65
48x (32µs On, 18µs Off), 6.4%
48
Input
P32A5
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IB1011L110 is a high power pulsed avionics transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under Mode S - ELM pulse burst conditions at VCC = 48V, this common base device supplies a minimum of 110W of peak pulse power. This bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

110W Output Power

100% Device RF Screening

Class C Operation

Single Power Supply

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99