IB1011M1100

High Power L-Band Transistor Supplying 1100W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.09
1100
9
44
32µs, 2%
60
Input & Output
P64A6
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IB1011M1100 is a high power pulsed transistor designed for TCAS avionics systems operating at 1.03 and 1.09 GHz. While operating in Class C mode under 32µs, 2%, at VCC = 60V, this common base device supplies a minimum of 1100 W of peak pulse power. This transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

1100W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99