IB1011M250

L-Band Avionics Transistor Operating at 250W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.03
250
8
62
128x (0.5µs On, 0.5µs Off), 1%
50
Input
P32A5
ign0160um12.jpeg

IB1011M250 is a high power pulsed avionics transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under mode S at VCC = 50V, this common base device supplies a minimum of 250W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters

FEATURES

Silicon Bipolar

Matched to 50-ohms

250W Output Power

100% Device RF Screening

Class C Operation

Single Power Supply

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99