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IB1011M350
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IB1011M350 | 1.03 | 1.09 | 350 | 11 | 72 | 128x (0.5µs On, 0.5µs Off), 1% | 50 | Input | P32A5 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.09
350
11
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
72
128x (0.5µs On, 0.5µs Off), 1%
50
Input
IB1011M350 is a high power pulsed avionics transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under mode S pulse burst conditions at VCC = 50V, this common base device supplies a minimum of 350W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
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