IB1011S1000

L-Band Avionics Transistor Operating at 1000W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.03
1000
10
57
10µs, 1%
50
Input
P64A6
ign0160um12.jpeg

IB1011S1000 is a high power pulsed transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under 10µs, 1%, at VCC = 50V, this common base device supplies a minimum of 1000W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

1000W Output Power

100% Device RF Screening

Class C Operation

Single Power Supply

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99