IB1011S1500
L-Band Avionics Transistor Operating at 1300W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
1.03 | 1.09 | 1300 | 10 | 50 | 10µs, 1% | 60 | Input | P64A6 |
IB1011S1500 is a high power pulsed transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under 10µs, 1%, at VCC = 60V, this common base device supplies a minimum of 1300W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
