IB1011S1500 is a high power pulsed transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under 10µs, 1%, at VCC = 60V, this common base device supplies a minimum of 1300W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.