IB1011S190

L-Band Avionics Transistor Operating at 190W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.03
190
12
70
10µs, 1%
60
Input
P32A5
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The high power pulsed avionics transistor part number IB1011S190 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 10µs, 1%, at VCC = 60V, this common base device supplies a minimum of 190 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability

FEATURES

Silicon Bipolar

Matched to 50-ohms

190W Output Power

100% Device RF Screening

Class C Operation

Single Power Supply

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99