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IB1011S350
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IB1011S350 | 1.03 | 1.09 | 350 | 12 | 59 | 10µs, 1% | 50 | Input | P32A5 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.09
350
12
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
59
10µs, 1%
50
Input
IB1011S350 is a high power pulsed transistor designed for L-band radar systems operating between 1.03 - 1.09 GHz. While operating in Class C mode this common base device supplies a minimum of 350W of peak pulse power under the conditions of 10µs pulse width, 1% duty cycle. All devices are 100% screened for large signal RF parameters.
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