IB1011S350

L-Band Radar Transistor Operating at 350W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.03
350
12
59
10µs, 1%
50
Input
P32A5
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IB1011S350 is a high power pulsed transistor designed for L-band radar systems operating between 1.03 - 1.09 GHz. While operating in Class C mode this common base device supplies a minimum of 350W of peak pulse power under the conditions of 10µs pulse width, 1% duty cycle. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

350W Output Power

100% Device RF Screening

Class C Operation

Single Power Supply

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99