IB1011S70 is the high power pulsed avionics transistor designed for L-band radar systems operating between 1.03 - 1.09 GHz. While operating in Class C mode this common base device supplies a minimum of 70W of peak pulse power under the conditions of 8W input power, and 10µs pulse width, 1% duty cycle. All devices are 100% screened for large signal RF parameters.