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IB1012S500 is a high power pulsed transistor device designed for systems operating over the instantaneous bandwidth of 1.025 - 1.150 GHz. While operating in Class C mode under DME pulsing conditions and VCC=50V, this common base device supplies a minimum of 500 W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
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