IB1012S500

High Power L-Band Transistor Operating at 1.025 - 1.150 GHz

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.025
1.15
500
10
54
10µs, 1%
50
Input & Output
P54A5
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IB1012S500 is a high power pulsed transistor device designed for systems operating over the instantaneous bandwidth of 1.025 - 1.150 GHz. While operating in Class C mode under DME pulsing conditions and VCC=50V, this common base device supplies a minimum of 500 W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

500W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99