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IB1214M130 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 1.21 - 1.40 GHz. While operating in Class C mode this common base device supplies a minimum of 130 W of peak pulse power under the conditions of 330us pulse width and 10% duty cycle, at Pin=20W. All devices are 100% screened for large signal RF parameters.
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