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IB1214M150
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IB1214M150 | 1.2 | 1.4 | 150 | 8 | 50 | 100µs, 10% | 40 | Input & Output | P32A5 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
150
8
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
100µs, 10%
40
Input & Output
IB1214M150 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 1.215 - 1.400 GHz. While operating in Class C mode this common base device supplies a minimum of 150W of peak pulse power under the conditions of 100us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters.
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