IB1214M150

High Power L-Band Transistor Supplying 150W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.2
1.4
150
8
50
100µs, 10%
40
Input & Output
P32A5
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IB1214M150 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 1.215 - 1.400 GHz. While operating in Class C mode this common base device supplies a minimum of 150W of peak pulse power under the conditions of 100us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

150W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99