IB1214M32
High Power L-Band Transistor Supplying 32W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
---|---|---|---|---|---|---|---|---|
1.2 | 1.4 | 32 | 11 | 54 | 100µs, 10% | 40 | Input | P32A5 |

IB1214M32 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 1.20 - 1.40 GHz. While operating in Class C mode this common base device supplies a minimum of 32 W of peak pulse power under the conditions of 100us pulse width and 10% duty cycle, and Pin=4W. All devices are 100% screened for large signal RF parameters.