IB1214M375

High Power L-Band Transistor Supplying 375W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.2
1.4
375
9
60
300µs, 10%
42
Input & Output
P64A28
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IB1214M375 high power pulsed radar transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 1.215-1.400 GHz. While operating in Class C mode this common base device supplies a minimum of 375W of peak pulse power under the conditions of 300us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

375W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99