IB1214M6

High Power L-Band Transistor Supplying 6W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.2
1.4
6
9
47
100µs, 10%
28
Input
P32C1
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IB1214M6 is a high power pulsed transistor device designed for L-Band radar systems operating over the instantaneous bandwidth of 1.20 - 1.40 GHz. While operating in Class C mode this common base device supplies a minimum of 6 W of peak pulse power under the conditions of 100us pulse width and 10% duty cycle, and Pin=0.8W. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

6W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99