IB1416S650

High Power L-Band Transistor Supplying 600W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.45
1.55
650
8
46
50x (0.5µs On, 1.5µs Off), 1%
50
Input & Output
P64A24
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IB1416S650 is a high power pulsed transistor designed for L-band avionics systems operating at 1.45 to 1.55 GHz. While operating in Class C mode under 8us, 1%, pulse conditions at VCC= 50V, this common base device supplies a minimum of 600 W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

600W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99