top of page
IB1416S650
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IB1416S650 | 1.45 | 1.55 | 650 | 8 | 46 | 8µs, 1% | 50 | Input & Output | P64A24 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.45
1.55
650
8
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
46
8µs, 1%
50
Input & Output
IB1416S650 is a high power pulsed transistor designed for L-band avionics systems operating at 1.45 to 1.55 GHz. While operating in Class C mode under 8us, 1%, pulse conditions at VCC= 50V, this common base device supplies a minimum of 600 W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
bottom of page