IB1416S650 is a high power pulsed transistor designed for L-band avionics systems operating at 1.45 to 1.55 GHz. While operating in Class C mode under 8us, 1%, pulse conditions at VCC= 50V, this common base device supplies a minimum of 600 W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.