IB2226M160

High Power S-Band Transistor Supplying 160W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
2.25
2.55
160
9
54
200µs, 10%
38
Input & Output
P32A5
ign0160um12.jpeg

IB2226M160 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 2.25 - 2.55 GHz. While operating in Class C mode this common base device supplies a minimum of 160 W of peak pulse power under the conditions of 200µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.

FEATURES

Silicon Bipolar

Matched to 50-ohms

160W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99