IB2226MH160

High Power S-Band Transistor Supplying 160W at 2.25-2.55 GHz

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
2.25
2.55
160
9
46
200µs, 10%
34
Input & Output
P44C4
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IB226MH160 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 2.25 - 2.55 GHz. While operating in Class C mode this common base device supplies a minimum of 160 W of peak pulse power under the conditions of 200us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression. This device is rated for a peak output power level of PPEAK = 160W @ 10% duty factor. This corresponds to an average power PAVG = 16W.

FEATURES

Silicon Bipolar

Matched to 50-ohms

160W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99