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IB226MH160 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 2.25 - 2.55 GHz. While operating in Class C mode this common base device supplies a minimum of 160 W of peak pulse power under the conditions of 200us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression. This device is rated for a peak output power level of PPEAK = 160W @ 10% duty factor. This corresponds to an average power PAVG = 16W.
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