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IB2729M170 is a high power pulsed transistor designed for S-band ATC radar systems operating over the instantaneous bandwidth of 2.7 - 2.9 GHz. While operating in Class C mode this common base device supplies a minimum of 170 W of peak pulse power under the conditions of 100µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.
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